Gallium(II) telluride (GaTe) is a layered III-VI semiconductor compound with a direct bandgap of approximately 1.65-1.8 eV. It crystallizes in a monoclinic structure where layers of covalently bonded Ga and Te atoms are held together by weaker van der Waals forces. This anisotropic structure gives rise to unique electronic and optical properties. Its primary applications are in the field of optoelectronics and photonics. GaTe is investigated as a promising material for photodetectors, especially in the visible to near-infrared spectrum, due to its high photoresponsivity and fast response time. The layered nature also makes it suitable for exfoliation into two-dimensional (2D) nanosheets for use in ultrathin, flexible electronic devices. Furthermore, its semiconducting properties are explored for potential use in solar cells and nonlinear optical applications. Beyond optoelectronics, GaTe and its nanostructures show catalytic potential, particularly in photocatalytic hydrogen evolution reactions. The material's ability to absorb visible light and generate charge carriers makes it a candidate for solar-driven water splitting catalysts. Handling requires caution as it may decompose to release toxic tellurium fumes upon heating or under strong acidic conditions.