Tetrakis(ethylmethylamido)titanium(IV) is a metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) precursor. It is a highly volatile, liquid titanium source containing Ti-N bonds, characterized by its low decomposition temperature and high purity delivery capability. Its primary and most significant application is in the deposition of titanium nitride (TiN) and titanium dioxide (TiO₂) thin films. These films are critical in semiconductor manufacturing, serving as diffusion barriers, electrodes in dynamic random-access memory (DRAM) capacitors, and gate electrodes. Furthermore, it is extensively used in the research and production of perovskite solar cells (PSCs), where it serves as an efficient electron transport layer (ETL) material when deposited as TiO₂, enhancing device efficiency and stability. As a high-performance precursor, it enables precise, conformal thin film growth at relatively low temperatures, which is essential for advanced nanoelectronics and optoelectronic devices. It must be handled under inert conditions due to its sensitivity to moisture and air.