TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)HAFNIUM, CAS No. 63370-90-1

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63370-90-1

Catalog No. EBD3062116

CAS 63370-90-1

Name TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)HAFNIUM

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Basic Information

Synonyms: HF(TMHD)4 NSC174885 HAFNIUM-THD99.9%HF(C11H19O2)4 TETRAKIS(DIPIVALOYLMETHANATO)HAFNIUM HAFNIUMTETRAKIS(DIPIVALOYLMETHANATE) HAFNIUM(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE) TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO)HAFNIUM TETRAKIS(2,2,6,6-TETRAMETHYLHEPTANE-3,5-DIONATO)HAFNIUM HAFNIUMTETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE) TETRAKIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATO-O,O')HAFNIUM 2,2,6,6-tetramethylheptane-3,5-dione-hafnium(4:1)

Molecular Formula: C44H76HfO8

Molecular Weight: 911.56

Categories: Materials Chemistry > Optoelectronic and Organic Semiconductor Materials > Optoelectronic Functional Compounds Synthetic Chemistry > Catalysts and Ligands > Metal Catalysts

Product Description:

Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium(IV), with CAS number 63370-90-1, is a coordination complex where hafnium(IV) is chelated by four β-diketonate ligands derived from 2,2,6,6-tetramethyl-3,5-heptanedione (Hthd or Htmhd). This compound typically exists as a white to off-white crystalline solid. It is moisture-sensitive and requires handling under inert atmospheres such as nitrogen or argon. This hafnium complex is primarily used as a precursor in the chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for manufacturing thin films. Its key application is in the deposition of hafnium oxide (HfO₂) and related high-k dielectric films, which are critical components in advanced semiconductor devices, including gate dielectrics in transistors and capacitor materials in memory chips. The volatile nature and thermal stability of this precursor make it suitable for vapor-phase deposition techniques. In addition to its role in materials science, this compound also finds use as a catalyst or catalyst precursor in certain organic synthesis reactions, leveraging the Lewis acidic properties of the hafnium center. It is commercially available from suppliers specializing in high-purity electronic chemicals and metal-organic precursors.

Physical Properties

Melting Point: 315-320°C

Boiling Point: 180°C 0,1mm

Flash Point: 67.2°C

Solubility: soluble in hydrocarbons alcohols, ketones. esters

Analytical Data

Appearance: Colourless crystalline powder